Type | Substrates | Display | Desciption | |||||
Si Epi | Si |
| size | 3-8” | ||||
Type | P/P++, N/N++, N/N+, N/N+/N++, N/P/P, P/N/N+ | |||||||
Epi Resistivity (Ω*cm) | 0.001-1500 | |||||||
Homogeneity | <6% | |||||||
Epi Thickness ( μm) | 0.1-200 | |||||||
Homogeneity | <10% | |||||||
R-Sapphire (SOS) |
| size | EPI Thickness (um) | EPI Res.(ohm.cm) | ||||
150 mm (6”) | 0.3 | >30 | ||||||
100 mm (4”) | 0.3,0.6 | >30 | 5-30 | 2.5-10 | ||||
76 mm (3”) | 0.6-5 | 0.003-0.025 | ||||||
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GaN/SiC Epi | C-Sapphire |
| EPI Type | N型(摻Si)、P型(摻Mg)、不摻雜 | ||||
Standard size | 2” | |||||||
Sapphire Thickness (um) | 430 | |||||||
EPI Thickness (um) | 3-9um | |||||||
Si/SiC | 4-6” GaN Epi on Si /SiC 4-6” SiC Epi on SiC |
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LED/LD Epi | GaAs |
| 2", 2 um AlInP EPI layer on GaAs substrate | 典型波長: 792nm、808nm、825nm、880nm、915nm、940nm、976nm、980nm、1060nm、1550nm??芍谱?/span>2W和4W器件。 可以提供LED級別的,2寸紅光,藍(lán)光,綠光外延片。擁有MBE、MOCVD工藝,按客戶要求定制苛刻要求的各種GaAs基,InP基,Si基等復(fù)雜結(jié)構(gòu)的外延。 可提供PL、X-ray、ECV檢測報告。 | ||||
2" AlGaAs on GaAs(N-type i-doped) substrate | ||||||||
3" structure is from bottom to top | ||||||||
InP |
| 2" /InP/ undoped | ||||||
2", 2 um InGaAs EPI layer on InP substrate | ||||||||
InP / 1.8 micron / undoped In(0.53)Ga(0.47)As/300 nm / p-type 1e18 cm-3 InP substrate / 350 micron / undoped |